N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

Niveau: Secondaire, Lycée, Terminale
BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS n TYPICAL RDS(on) = 0.03 ? n AVALANCHE RUGGED TECHNOLOGY n 100% AVALANCHE TESTED n REPETITIVE AVALANCHE DATA AT 100oC n LOW GATE CHARGE n HIGH CURRENT CAPABILITY n 175oC OPERATING TEMPERATURE APPLICATIONS n HIGH CURRENT, HIGH SPEED SWITCHING n SOLENOID AND RELAY DRIVERS n REGULATORS n DC-DC & DC-AC CONVERTERS n MOTOR CONTROL, AUDIO AMPLIFIERS n AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) INTERNAL SCHEMATIC DIAGRAM TYPE VDSS RDS(on) ID BUZ11 BUZ11FI 50 V 50 V < 0.04 ? < 0.04 ? 36 A 21 A 1 2 3 TO-220 ISOWATT220 May 1993 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BUZ11 BUZ11FI VDS Drain-source Voltage (VGS = 0) 50 V VDG R Drain- gate Voltage (RGS = 20 k?) 50 V VGS Gate-source Voltage ± 20 V ID Drain Current (cont inuous) at Tc = 25 oC 36 21 A IDM Drain Current (pulsed) 144 144 A Ptot Total Dissipation at Tc = 25 oC 120 40 W VISO Insulat ion Withstand Voltage (DC) ? 2000 V Tstg Storage Temperature -65 to 175 oC Tj Max. Operat ing Junction Temperature 175 oC DIN Humidity Category (DIN 40040) E IEC Climatic Category (DIN IEC 68-1) 55/150/56 1 2 3 1/8

• µa µa


• vgs


• static drain-source


• gate voltage


• ns ns


• pf


• symbol parameter


• current