N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

Niveau: Secondaire, Lycée, Terminale
STP50N06 STP50N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR n TYPICAL RDS(on) = 0.022 ? n AVALANCHE RUGGED TECHNOLOGY n 100% AVALANCHE TESTED n REPETITIVE AVALANCHE DATA AT 100oC n LOW GATE CHARGE n HIGH CURRENT CAPABILITY n 175oC OPERATING TEMPERATURE n APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS n HIGH CURRENT, HIGH SPEED SWITCHING n SOLENOID AND RELAY DRIVERS n REGULATORS n DC-DC & DC-AC CONVERTERS n MOTOR CONTROL, AUDIO AMPLIFIERS n AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) INTERNAL SCHEMATIC DIAGRAM TO-220 ISOWATT220 July 1993 TYPE VDSS RDS(on) ID STP50N06 STP50N06FI 60 V 60 V < 0.028 ? < 0.028 ? 50 A 27 A ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP50N06 STP50N06FI VDS Drain-source Voltage (VGS = 0) 60 V VDG R Drain- gate Voltage (RGS = 20 k?) 60 V VGS Gate-source Voltage ± 20 V ID Drain Current (cont inuous) at Tc = 25 oC 50 27 A ID Drain Current (cont inuous) at Tc = 100 oC 35 19 A IDM(•) Drain Current (pulsed) 200 200 A Ptot Total Dissipation at Tc = 25 oC 150 45 W Derating Factor 1 0.3 W/oC VISO Insulat ion Withstand Voltage (DC) ? 2000 V Tstg Storage Temperature -65 to 175 oC Tj Max.

• avalanche characteristics


• drain current


• gate-drain charge


• gate voltage


• pf


• µa