Atomic vapor depositions of metal insulator metal capacitors [Elektronische Ressource] : investigation, development and integration / von Mindaugas Lukošius

Atomic Vapor Depositions of Metal Insulator Metal capacitors: Investigation, Development and Integration Von der Fakultät für Mathematik und Naturwissenschaften der Carl von Ossietzky Universität Oldenburg zur Erlangung des Grades und Titels Doctor rerum naturalium (Dr. rer. nat.) Angenommene Dissertation von Herrn Mindaugas Lukošius geboren am 20.10.1981 in Panevezys (Litauen) Gutachterin: Prof. Dr. Katharina Al-Shamery Gutachter: Dr. habil. Christian Wenger Tag der Disputation: 12.03.2010 Abstract Metal-Insulator-Metal (MIM) capacitors are one of the most essential passive components in radio frequency devices and analog/mixed-signal integrated circuits. However, depending on the applications, MIM capacitors can require up to 50 % of the chip area. This strongly affects the ability to reduce the size of the chips, but the reduction and downscaling of the chips are crucial in order to reduce the cost, and therefore increase the functionality and performance of the devices. To achieve a higher capacitance per unit area for providing the analog scaling is the main objective. Since capacitance is a direct function of the dielectric constant of the insulator, the replacement of currently used silicon oxide or silicon nitride films with the new alternative dielectrics which have higher permittivity values is a very promising approach.